A comparative analysis between nitride films on GaAs and epitaxial films of GaN by MOCVD system

Author

Vilchis, H. ; Sánchez-R, Víctor M. ; Escobosa, A.

Author_Institution

Dept. of Electr. Eng., CINVESTAV-IPN, Mexico City

fYear

2008

fDate

12-14 Nov. 2008

Firstpage

425

Lastpage

427

Abstract

In this paper we report the conclusions about the analysis between the characteristics of nitrided thin gallium nitride (GaN) films on GaAs and epitaxial GaN films on buffer nitrided films. We use the metal-organic chemical vapour deposition technique for synthesize these films. Also ones films were characterized using X-ray diffraction (XRD), photoluminescence (PL) and atomic force microscopy (AFM).

Keywords

III-V semiconductors; MOCVD; X-ray diffraction; atomic force microscopy; epitaxial growth; gallium arsenide; gallium compounds; photoluminescence; wide band gap semiconductors; GaAs; GaN; MOCVD system; X-ray diffraction; atomic force microscopy; buffer nitrided films; epitaxial films; gallium nitride; metal-organic chemical vapour deposition; nitride thin films; photoluminescence; Atomic force microscopy; Atomic layer deposition; Chemical vapor deposition; Gallium arsenide; Gallium nitride; III-V semiconductor materials; MOCVD; Photoluminescence; X-ray diffraction; X-ray scattering; epitaxial GaN films; nitride GaN films;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Engineering, Computing Science and Automatic Control, 2008. CCE 2008. 5th International Conference on

Conference_Location

Mexico City

Print_ISBN

978-1-4244-2498-6

Electronic_ISBN

978-1-4244-2499-3

Type

conf

DOI

10.1109/ICEEE.2008.4723423

Filename

4723423