DocumentCode
1981896
Title
The Multiple Quantum Barrier Structures and their Application to the High Power Visible Laser Diode with the Strained InGaP Active Layer Grown by MOCVD
Author
Kadoiwa, K. ; Motoda, T. ; Nishimura, T. ; Arimoto, S. ; Watanabe, H. ; Kamizato, T. ; Mizuguchi, K. ; Murotani, T.
Author_Institution
Optoelectronic and Microwave Devices Laboratory, Japan
fYear
1992
fDate
8-11 Jun 1992
Firstpage
226
Lastpage
227
Keywords
Controllability; Diode lasers; MOCVD; Mirrors; Optical recording; Power generation; Power lasers; Quantum well lasers; Surface emitting lasers; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN
0-87942-652-7
Type
conf
DOI
10.1109/MOVPE.1992.665028
Filename
665028
Link To Document