Three new mathematical techniques for field effect transistor modeling and analysis

Author

Snider, Arthur David

Author_Institution

Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA

fYear

1998

fDate

2-4 Mar 1998

Firstpage

65

Lastpage

68

Abstract

We describe: (i) an accurate way to enforce charge conservation with minimal disruption of the model extraction process; (ii) the correct way to smooth drain conductance and transconductance data for deriving large-signal drain current; and (iii) a priori identification of ill-conditioned parameters in small-signal models which are intrinsically difficult to measure

Keywords

Poisson equation; S-parameters; Schottky gate field effect transistors; circuit simulation; field effect transistors; finite difference methods; semiconductor device models; smoothing methods; Dirichlet principle; FET modeling; MAPLE software; MESFET model; Poisson equation; S-parameters; a priori identification; charge conservation; circuit simulation; drain conductance data; finite differences; ill-conditioned parameters; intrinsic sensitivity; large-signal drain current; mathematical techniques; minimal disruption; model extraction process; small-signal models; smoothing algorithm; transcapacitance; transconductance data; Capacitors; Charge measurement; Computational modeling; Current measurement; FETs; Intrusion detection; Mathematical model; Smoothing methods; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 1998. Proceedings of the 1998 Second IEEE International Caracas Conference on

Conference_Location

Isla de Margarita

Print_ISBN

0-7803-4434-0

Type

conf

DOI

10.1109/ICCDCS.1998.705807

Filename

705807