Title :
A Very Broadband Microwave Distributed Amplifier using FETs
Author :
Nwaogu, G. ; Aitchison, C.S.
Author_Institution :
Department of Electronics, Chelsea College (University of London), Pulton Place, London SW6 5PR, England.
Abstract :
This paper describes the design and performance of a single stage MESFET amplifier which uses artificial transmission line techniques. A gain of 5dB ± 1dB over the band 2 GHz to 7¿ GHz has been obtained - a result which agrees with prediction.
Keywords :
Capacitance; Capacitors; Distributed amplifiers; Equivalent circuits; FETs; Frequency; Impedance; MESFET circuits; Performance gain; Transmission line theory;
Conference_Titel :
Microwave Conference, 1981. 11th European
Conference_Location :
Amsterdam, Netherlands
DOI :
10.1109/EUMA.1981.333055
