Title :
A Cascode VCO based on Enhanced Colpitts Structure in InGaP/GaAs HBT Technology
Author :
Na, Ho-San ; Shrestha, Bhanu ; Qian, Cheng ; Kim, Nam-Young
Author_Institution :
Kwangwoon Univ., Seoul
Abstract :
In this paper, an integrated InGaP/GaAs MMIC VCO for an adaptive feedback interference cancellation system (AF- ICS) application is proposed. The new enhanced Colpitts architecture designed with low current consumption and low phase noise performance is implemented. The feedback capacitors are added between two transistors to increase the negative resistance and reduce the external noise interference. The phase noise of this VCO is -128.08 dBc/Hz at 100 KHz and - 138.46 dBc/Hz at 10 MHz offset frequency from the carrier frequency of 1.52 GHz when applying the control voltage of 1 volt. Three BC diodes are integrated in the same chip as a varactor to increase the VCO tuning range. The VCO is designed within the size of 0.76 x 0.86 mm2.
Keywords :
III-V semiconductors; MMIC oscillators; gallium arsenide; heterojunction bipolar transistors; indium compounds; voltage-controlled oscillators; HBT technology; InGaP-GaAs; MMIC oscillators; adaptive feedback interference cancellation system; cascode VCO; enhanced Colpitts structure; feedback capacitors; Capacitors; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Interference cancellation; MMICs; Negative feedback; Noise reduction; Phase noise; Voltage-controlled oscillators; Heterojunction bipolar transistor (HBT); InGaP/GaAs; colpitts; monolithic microwave integrated circuit (MMIC) oscillators; phase noise; voltage controlled oscillator (VCO);
Conference_Titel :
Microwave Conference, 2007. APMC 2007. Asia-Pacific
Conference_Location :
Bangkok
Print_ISBN :
978-1-4244-0748-4
Electronic_ISBN :
978-1-4244-0749-1
DOI :
10.1109/APMC.2007.4555095
