Design and analysis of an image transceiver device with a low cross-talk level

Author

David, Y. ; Efron, U.

Author_Institution

Dept. of Electr. Eng., Holon Acad. Inst. of Technol., Israel

fYear

2004

fDate

6-7 Sept. 2004

Firstpage

41

Lastpage

43

Abstract

The image transceiver device (ITD) combines a back-illuminated APS imager with an LCOS (liquid crystal on silicon) micro-display formed on the front-side of the CMOS chip. By means of Silvaco´s ATLAS device simulator, we examine three ITD structures: n-well process based; twin-well process based; deep p-well. The simulated results shows that a deep p-well pixel structure provides low cross-talk for the backside imager as well as an effective photo charge shielding for the pixel circuitry.

Keywords

CMOS image sensors; crosstalk; integrated circuit design; liquid crystal displays; liquid crystal on silicon; microdisplays; network analysis; transceivers; CMOS chip; CMOS imager; LCOS micro-display; back-illuminated APS imager; cross-talk; crosstalk; deep p-well pixel structure; deep p-well structure; image transceiver device; liquid crystal on silicon micro-display; n-well process based structure; photo charge shielding; twin-well process based structure; CMOS image sensors; CMOS technology; Circuit simulation; Electrodes; Image analysis; Liquid crystal displays; Liquid crystal on silicon; Pixel; Switches; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Electronics Engineers in Israel, 2004. Proceedings. 2004 23rd IEEE Convention of

Print_ISBN

0-7803-8427-X

Type

conf

DOI

10.1109/EEEI.2004.1361083

Filename

1361083