Theory and Operation of Waveguide Junction with Transversely Magnetized Semiconductor

Excitation of microwaves in a waveguide four-port junction, containing a semiconductor plate, biased with transverse d.c. magnetic field is studied analytically and experimentally in X-band. Coupling occurs between the input and the output of the junction when a Hall field is generated across the semiconductor sample. Analytical expressions for the field distribution of the excited TE1.0 mode and the Hall power are derived, using Lorentz reciprocity theorem. Experimental results of Hall effect excitation mechanism of the junction and details of launcher and its design procedure are presented. Possible application of the junction as diagnostic tool formeasurement of semiconductor properties at microwave frequencies and passive magnetically controlled solid state device are discussed.