DocumentCode :
1982808
Title :
20 GHz GaAs FET Amplifier for H-SAT Repeater
Author :
Arnold, J.
Author_Institution :
Plessey Research (Caswell) Limited, Towcester, Northants., England.
fYear :
1981
fDate :
7-11 Sept. 1981
Firstpage :
775
Lastpage :
780
Abstract :
This paper describes the results of a study undertaken for the European Space Agency to evaluate currently available GaAs MESFETs, and the development of an amplifier suitable for inclusion in a proposed 20/12 GHz H-SAT repeater. The study was undertaken during the period January 1979 to May 1980 prior to the WARC-77 Conference, which subsequently al1ocated a frequency of 17.3 GHz. However, the study indicated the performance capability of the available short gate length MESFETs (0.6¿m).
Keywords :
Bandwidth; FETs; Frequency; Gallium arsenide; Impedance; MESFETs; Noise figure; Repeaters; Scattering parameters; Semiconductor device measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1981. 11th European
Conference_Location :
Amsterdam, Netherlands
Type :
conf
DOI :
10.1109/EUMA.1981.333017
Filename :
4131712
Link To Document :
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