Millimeter-Wave Si/SiGe HBT Frequency Divider Using Dynamic and Static Division Stages

Author

Chartier, Sebastien ; Sonmez, Ertugrul ; Dederer, Jochen ; Schleicher, Bernd ; Schumacher, Hermann

Author_Institution

Inst. of Electron Devices & Circuits, Univ. Ulm, Ulm

fYear

2007

fDate

11-14 Dec. 2007

Firstpage

1

Lastpage

4

Abstract

In this paper, the authors present a fully integrated frequency divider with a divide ratio of 32, using a 0.8 mum Si/SiGe HBT technology. The divider operates at least up to 40 GHz and shows outstanding performance such as broad frequency of operation, compact die area (1130 times 460 mum²), reasonable power consumption (150 mA at 5 V supply voltage or 110 mA at 4 V with slightly degraded performance) and excellent sensitivity. The integrated circuit combines the advantages of the dynamic topology (first two stages) which includes an additional transimpedance stage and the static topology (last three stages) in order to reach these excellent results.

Keywords

Ge-Si alloys; elemental semiconductors; frequency dividers; heterojunction bipolar transistors; millimetre wave transistors; silicon; HBT frequency divider; Si-SiGe; dynamic topology; heterojunction bipolar transistors; integrated circuit; millimeter-wave devices; power consumption; Circuit topology; Costs; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Millimeter wave technology; Millimeter wave transistors; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2007. APMC 2007. Asia-Pacific

Conference_Location

Bangkok

Print_ISBN

978-1-4244-0748-4

Electronic_ISBN

978-1-4244-0749-1

Type

conf

DOI

10.1109/APMC.2007.4555133

Filename

4555133