DocumentCode :
1983006
Title :
In-Situ Formation of As-H-Functions by β-Elimination of Specific Metalorganic Arsenic Compounds for the MOVPE of III/V-Semiconductors
Author :
Zimmerman, G. ; Protzmann, H. ; Stolz, W. ; Gobel, E.O. ; Gimmnich, P. ; Greiling, A. ; Lorberth, J. ; Thalmann, C. ; Rademann, K.
Author_Institution :
Philipps-Universitat, Germany
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
244
Lastpage :
244
Keywords :
Ash; Detectors; Epitaxial growth; Epitaxial layers; Gallium arsenide; Inductors; Mass spectroscopy; Temperature distribution; Thermal decomposition; Toxic chemicals;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.665037
Filename :
665037
Link To Document :
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