DocumentCode
1983461
Title
Conductive mechanism and its mathematical model of thick-film strain resistors
Author
Ma, Yiwu ; Chen, Jianqun ; Ding, Peng ; Li, Minqiang
Author_Institution
State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Anhui, China
fYear
2005
fDate
27 June-3 July 2005
Abstract
Some thick-film resistors base on Bi2Ru2O7 were evaluated. The resistors are made by screen-printing thick film paste on Al2O3 substrates. After printing and drying, the thick-film pastes are fired in a belt furnace. We discuss the conduction mechanism and a strain sensitive mathematical model of thick-film resistors through calculating and taking the measurements of the gauge factor (GF). We also interpreted the phenomenon through the strain sensitive model, and explained the strain sensitive phenomenon, such as the GF mounts up with the barrier height´s augmention.
Keywords
bismuth compounds; drying; pressure sensors; ruthenium compounds; substrates; thick film resistors; Al2O3; Bi2Ru2O7; belt furnace; conductive mechanism; gauge factor; screen-printing; strain sensitive mathematical model; substrate; thick film paste; thick-film strain resistor; Belts; Bismuth; Capacitive sensors; Furnaces; Mathematical model; Printing; Resistors; Strain measurement; Substrates; Thick films;
fLanguage
English
Publisher
ieee
Conference_Titel
Information Acquisition, 2005 IEEE International Conference on
Print_ISBN
0-7803-9303-1
Type
conf
DOI
10.1109/ICIA.2005.1635058
Filename
1635058
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