Title :
Single mode AlGaInAs/InP hexagonal resonator microlasers
Author :
Lin, Jian-Dong ; Huang, Yong-Zhen ; Yang, Yue-De ; Yao, Qi-Feng ; Lv, Xiao-Meng ; Xiao, Jin-Long ; Du, Yun
Author_Institution :
State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China
fDate :
Aug. 28 2011-Sept. 1 2011
Abstract :
AlGalnAs/InP hexagonal resonator microlasers are fabricated using standard photolithography and ICP etching process. Room temperature continuous-wave electrically injected operation is realized for the hexagon microlasers with an output waveguide connected to one vertex. Single mode operation is achieved with the side mode suppression ratio up to 25 dB for a hexagon microlaser with the edge length of 16 μm and the output waveguide width of 2 μm. The experimental results indicate that single transverse mode operation is easy to realize in hexagon microlasers.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium compounds; indium compounds; laser modes; laser stability; microcavity lasers; optical fabrication; photolithography; semiconductor lasers; AlGaInAs-InP; ICP etching; hexagonal resonator microlasers; photolithography; side mode suppression ratio; single mode laser; transverse mode operation; Indium phosphide; Laser modes; Optical resonators; Optical waveguides; Vertical cavity surface emitting lasers; Waveguide lasers;
Conference_Titel :
Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
Conference_Location :
Sydney, NSW
Print_ISBN :
978-1-4577-1939-4
DOI :
10.1109/IQEC-CLEO.2011.6193651
