Title :
GaAs Monolithic 1 GHz Video Amplifier using Ti/W Silictde Gate Technology
Author :
Takeda, Yukio ; Shigaki, Masafumi ; Takano, Takeshi ; Daido, Yoshimasa ; Suyama, Katsuhiko
Author_Institution :
Fujitsu Laboratories ltd., 1015 Kamikodanaka Nakahara-Ku Kawasaki 211, Japan.
Abstract :
A GaAs monolithic video amplifier is designed with the aid of computer simulation where FET parameters are determined by the dc and low frequency responses. GaAs monolithic IC chips are fabricated by self-aligned Ti/W silicide gate technology. The amplifier composed of FETs with 2 ¿m gate length has a gain of 12 dB with a bandwidth of 0.8 GHz which agree well with the computer simulation. Gain of 13 dB and bandwidth of 3 GHz can be expected using FETs with a gate length of 1 ¿m, as suggested by computer simulation.
Keywords :
Bandwidth; Computer simulation; Differential amplifiers; Equivalent circuits; Fabrication; Frequency; Gain; Gallium arsenide; Microwave FETs; Silicides;
Conference_Titel :
Microwave Conference, 1982. 12th European
Conference_Location :
Helsinki, Finland
DOI :
10.1109/EUMA.1982.333149
