Improvements in Receiver RF Burnout Characteristics and Reduction of Post Overload Degradations in Low Noise GaAs FETs

To achieve optimum and reliable performance from GaAs FET amplifiers in radar and communication receivers, when RF overload is prevalent, requires a knowledge of RF burnout and post overload degradations. The identification of burnout mechanisms has resulted in improved RF burnout figures using selection procedures. The changes to RF performance, apparent at lower RF overloads, have been reduced to insignificant levels using modified devices resulting in robust overload resistant amplifiers.