DocumentCode :
1983591
Title :
8 and 11 GHz Bands Low Noise FET Amplifiers Operating at Room Temperature
Author :
Hashimoto, Tsutomu ; Takeda, Fumio ; Nakazawa, Toshio ; Seino, Kiyoharu
Author_Institution :
Information Systems and Electronics Development Laboratory, MITSUBISHI ELECTRIC CORPORATION, 325 Kamimachiya, Kamakura city, Kanagawa prefecture, Japan 247
fYear :
1982
fDate :
13-17 Sept. 1982
Firstpage :
138
Lastpage :
142
Abstract :
8 and 11 GHz bands low noise FET amplifier operating at room temperature have been developed. Noise temperature of these FET amplifiers are 105 K and 185 K at 8 and 11 GHz bands, respectively.
Keywords :
Bandwidth; Broadband amplifiers; Circuit noise; FETs; Gallium arsenide; Low-noise amplifiers; Noise figure; Satellite ground stations; Signal to noise ratio; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1982. 12th European
Conference_Location :
Helsinki, Finland
Type :
conf
DOI :
10.1109/EUMA.1982.333153
Filename :
4131755
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1983591
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