Digital CMOS dosimeters

Author

Garcia-Moreno, E.

Author_Institution

Dept. de Fisica, Univ. de les Illes Balears, Palma de Mallorca, Spain

fYear

1998

fDate

2-4 Mar 1998

Firstpage

92

Lastpage

97

Abstract

Several radiation dosimeters are presented. They are intended to be used as built-in sensors in integrated circuits signaling misfunction danger due to radiation exposure. All are CMOS circuits compatible with standard technology using PMOSFET sensors. Two types are investigated. The first, called threshold dosimeter, has a binary output that changes its state when the total radiation dose exceeds a prefixed level. The second type is a new kind of linear dosimeter, giving a frequency dependence of the total absorbed dose. Details of the operation, circuit fabrication and experimental results are given

Keywords

CMOS digital integrated circuits; SPICE; built-in self test; dosimeters; gamma-ray effects; hole traps; radiation hardening (electronics); IC built-in sensors; PMOSFET sensors; SPICE model; binary output; circuit fabrication; clocked circuit; digital CMOS dosimeters; frequency dependence; gamma irradiation; hole trap density; internal photoemission; linear dosimeter; misfunction danger; operation; polynomial functions; radiation dosimeters; radiation exposure; threshold dosimeter; total absorbed dose; total radiation dose; CMOS technology; Charge carrier processes; Clocks; Electron traps; Energy consumption; MOSFET circuits; Photonic band gap; Physics; Radiation effects; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Systems, 1998. Proceedings of the 1998 Second IEEE International Caracas Conference on

Conference_Location

Isla de Margarita

Print_ISBN

0-7803-4434-0

Type

conf

DOI

10.1109/ICCDCS.1998.705813

Filename

705813