• DocumentCode
    1983760
  • Title

    Temperature Stabilization of GaAs FET Oscillators using Dielectric Resonators

  • Author

    Tsironis, C. ; Lesartre, P.

  • fYear
    1982
  • fDate
    13-17 Sept. 1982
  • Firstpage
    181
  • Lastpage
    186
  • Abstract
    A model of frequency drift with temperature of GaAs FET oscillators, stabilized using dielectric resonators is presented. Conditions for output power, oscillation frequency and frequency stability have been derived. A stacked resonator with linear resonance frequency-temperature characteristic has been developed using Barium Titanate and Titanium Zirconate dielectric material. It enabled the realization of a highly stable oscillator at 11.5 GHz with total drift of ±120 KHz in the temperature range of ¿20°C to 80°C.
  • Keywords
    Barium; Dielectrics; FETs; Gallium arsenide; Oscillators; Power generation; Resonance; Resonant frequency; Stability; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1982. 12th European
  • Conference_Location
    Helsinki, Finland
  • Type

    conf

  • DOI
    10.1109/EUMA.1982.333160
  • Filename
    4131762
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1983760