• DocumentCode
    1983778
  • Title

    Temperature dependence of ZnO thin film growth and its application to self-powered fabrics

  • Author

    Elam, David ; Kotha, Ramakrishna ; Hackworth, Ross ; Ayon, Arturo ; Chen, Chonglin ; Chabanov, A.

  • Author_Institution
    Dept. of Phys., Univ. of Texas San Antonio, San Antonio, TX, USA
  • fYear
    2010
  • fDate
    22-24 Feb. 2010
  • Firstpage
    20
  • Lastpage
    22
  • Abstract
    Zinc oxide thin films are becoming increasingly popular for their wide range of properties and the ability to deposit these films on organic substrates for applications such as biotemplating, OLEDs, or deposition on fabrics for functionalization purposes including power generation from the flexing and deformation of wearable textiles. However, since many fabrics and other organic substrates can not survive the typically high temperatures of thin film growth, it is important to characterize and understand the dependence of the properties of these films as a function of temperature deposition and subsequent thermal treatments. We report on the properties of zinc oxide thin films grown by Atomic Layer Deposition (ALD) and the dependence of surface roughness, film stress, surface energy and crystalline structure on deposition temperature.
  • Keywords
    II-VI semiconductors; atomic layer deposition; crystal structure; semiconductor growth; semiconductor thin films; surface energy; surface roughness; wide band gap semiconductors; zinc compounds; Atomic Layer Deposition; OLEDs; ZnO; biotemplating; crystalline structure; film stress; organic substrates; self-powered fabrics; surface energy; surface roughness; wearable textiles deformation; zinc oxide thin films; Fabrics; Organic light emitting diodes; Rough surfaces; Sputtering; Substrates; Surface roughness; Surface treatment; Temperature dependence; Transistors; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics, Communications and Computer (CONIELECOMP), 2010 20th International Conference on
  • Conference_Location
    Cholula
  • Print_ISBN
    978-1-4244-5352-8
  • Electronic_ISBN
    978-1-4244-5353-5
  • Type

    conf

  • DOI
    10.1109/CONIELECOMP.2010.5440802
  • Filename
    5440802