Design and fabrication of Schottky diodes in 1.2 µm CMOS process

Author

de la Cruz-Alejo, Jesus ; Oliva-Moreno, L. Noé ; Medina-Vázquez, A. Santiago

Author_Institution

Tecnol. de Estudios Superiores de Ecatepec, Mexico

fYear

2010

fDate

22-24 Feb. 2010

Firstpage

5

Lastpage

8

Abstract

The I-V curves for Schottky diodes with two different contact areas and geometries fabricated through 1.2 μm CMOS process are presented. These curves are described applying the analysis and practical layout design. It takes into account the resistance, capacitance and reverse breakdown voltage in the semiconductor structure and the dependence of these parameters to improve its operation. The described diodes are used for a charge pump circuit implementation.

Keywords

CMOS integrated circuits; Schottky diodes; charge pump circuits; electric breakdown; integrated circuit layout; CMOS process; Schottky diodes; capacitance breakdown voltage; charge pump circuit implementation; current-voltage curves; layout design; resistance breakdown voltage; reverse breakdown voltage; semiconductor structure; size 1.2 μm; CMOS process; CMOS technology; Capacitance; Charge pumps; Circuits; Electrons; Fabrication; Frequency; Schottky diodes; Semiconductor diodes; CMOS process; Schottky diodes; layout;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Computer (CONIELECOMP), 2010 20th International Conference on

Conference_Location

Cholula

Print_ISBN

978-1-4244-5352-8

Electronic_ISBN

978-1-4244-5353-5

Type

conf

DOI

10.1109/CONIELECOMP.2010.5440807

Filename

5440807