Title :
Design and fabrication of Schottky diodes in 1.2 µm CMOS process
Author :
de la Cruz-Alejo, Jesus ; Oliva-Moreno, L. Noé ; Medina-Vázquez, A. Santiago
Author_Institution :
Tecnol. de Estudios Superiores de Ecatepec, Mexico
Abstract :
The I-V curves for Schottky diodes with two different contact areas and geometries fabricated through 1.2 μm CMOS process are presented. These curves are described applying the analysis and practical layout design. It takes into account the resistance, capacitance and reverse breakdown voltage in the semiconductor structure and the dependence of these parameters to improve its operation. The described diodes are used for a charge pump circuit implementation.
Keywords :
CMOS integrated circuits; Schottky diodes; charge pump circuits; electric breakdown; integrated circuit layout; CMOS process; Schottky diodes; capacitance breakdown voltage; charge pump circuit implementation; current-voltage curves; layout design; resistance breakdown voltage; reverse breakdown voltage; semiconductor structure; size 1.2 μm; CMOS process; CMOS technology; Capacitance; Charge pumps; Circuits; Electrons; Fabrication; Frequency; Schottky diodes; Semiconductor diodes; CMOS process; Schottky diodes; layout;
Conference_Titel :
Electronics, Communications and Computer (CONIELECOMP), 2010 20th International Conference on
Conference_Location :
Cholula
Print_ISBN :
978-1-4244-5352-8
Electronic_ISBN :
978-1-4244-5353-5
DOI :
10.1109/CONIELECOMP.2010.5440807
