DocumentCode
1984374
Title
Epitaxial (Ba,Sr)TiO/sub 3/ capacitors with extremely high dielectric constant for DRAM applications
Author
Fukushima, N. ; Abe, K. ; Izuha, M. ; Schimizu, T. ; Kawakubo, T.
Author_Institution
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
257
Lastpage
260
Abstract
A novel dielectric capacitor cell was developed using a (Ba,Sr)TiO/sub 3/ heteroepitaxial technique on SrRuO/sub 3/ electrodes. An extremely high dielectric constant was observed in 20-nm thick (Ba,Sr)TiO/sub 3/ capacitors, which correspond to the effective SiO/sub 2/ thickness of 0.084 nm. The leakage current of these capacitors was found to low and their superior reliability compared to conventional polycrystalline capacitors was confirmed.
Keywords
DRAM chips; barium compounds; capacitors; epitaxial layers; leakage currents; permittivity; reliability; strontium compounds; (BaSr)TiO/sub 3/-SrRuO/sub 3/; DRAM; SrRuO/sub 3/ electrode; dielectric constant; epitaxial (Ba,Sr)TiO/sub 3/ capacitor; heteroepitaxial technique; leakage current; reliability; Breakdown voltage; Capacitors; Computational modeling; Dielectric constant; Electrodes; High-K gate dielectrics; Lattices; Random access memory; Stress; Strontium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.650376
Filename
650376
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