Title :
Epitaxial (Ba,Sr)TiO/sub 3/ capacitors with extremely high dielectric constant for DRAM applications
Author :
Fukushima, N. ; Abe, K. ; Izuha, M. ; Schimizu, T. ; Kawakubo, T.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
A novel dielectric capacitor cell was developed using a (Ba,Sr)TiO/sub 3/ heteroepitaxial technique on SrRuO/sub 3/ electrodes. An extremely high dielectric constant was observed in 20-nm thick (Ba,Sr)TiO/sub 3/ capacitors, which correspond to the effective SiO/sub 2/ thickness of 0.084 nm. The leakage current of these capacitors was found to low and their superior reliability compared to conventional polycrystalline capacitors was confirmed.
Keywords :
DRAM chips; barium compounds; capacitors; epitaxial layers; leakage currents; permittivity; reliability; strontium compounds; (BaSr)TiO/sub 3/-SrRuO/sub 3/; DRAM; SrRuO/sub 3/ electrode; dielectric constant; epitaxial (Ba,Sr)TiO/sub 3/ capacitor; heteroepitaxial technique; leakage current; reliability; Breakdown voltage; Capacitors; Computational modeling; Dielectric constant; Electrodes; High-K gate dielectrics; Lattices; Random access memory; Stress; Strontium;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650376
