• DocumentCode
    1984829
  • Title

    Theoretical and Experimental Comparison Between Fundamental and Harmonic Operation of GaAs MM . Wave T.E.O.´si

  • Author

    Friscourt, M.R. ; Rolland, P.A. ; Salmer, G. ; Lacombe, J.

  • Author_Institution
    Centre Hyperfrequence et Semiconducteurs, Université des Sciences et Techniques de LILLE, VILLENEUVE D´´ASCQ, FRANCE
  • fYear
    1982
  • fDate
    13-17 Sept. 1982
  • Firstpage
    514
  • Lastpage
    519
  • Abstract
    Simulations of GaAsmillimeter wave T.E.O.´s indicate the possibility of fundamental accumulation layer transit mode up to 100 GHz with higher conversion efficiency than that obtained with harmonic mode. Significant improvement in output power is expected from InP fundamental oscillators in the upper part of the millimeter band.
  • Keywords
    Cathodes; Delay effects; Electrons; Frequency; Gallium arsenide; Gunn devices; Heating; Indium phosphide; Millimeter wave technology; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1982. 12th European
  • Conference_Location
    Helsinki, Finland
  • Type

    conf

  • DOI
    10.1109/EUMA.1982.333113
  • Filename
    4131818
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1984829