Title :
Theoretical and Experimental Comparison Between Fundamental and Harmonic Operation of GaAs MM . Wave T.E.O.´si
Author :
Friscourt, M.R. ; Rolland, P.A. ; Salmer, G. ; Lacombe, J.
Author_Institution :
Centre Hyperfrequence et Semiconducteurs, Université des Sciences et Techniques de LILLE, VILLENEUVE D´´ASCQ, FRANCE
Abstract :
Simulations of GaAsmillimeter wave T.E.O.´s indicate the possibility of fundamental accumulation layer transit mode up to 100 GHz with higher conversion efficiency than that obtained with harmonic mode. Significant improvement in output power is expected from InP fundamental oscillators in the upper part of the millimeter band.
Keywords :
Cathodes; Delay effects; Electrons; Frequency; Gallium arsenide; Gunn devices; Heating; Indium phosphide; Millimeter wave technology; Temperature;
Conference_Titel :
Microwave Conference, 1982. 12th European
Conference_Location :
Helsinki, Finland
DOI :
10.1109/EUMA.1982.333113
