DocumentCode
1985030
Title
High-power 2.1-/spl mu/m GaSb-based laser diode arrays
Author
Huang, Robin K. ; Manfra, Michael J. ; Bailey, R.J. ; Bailey, Robert J. ; Plant, Jason J. ; Turner, G.W.
Author_Institution
Lincoln Lab., MIT, Lexington, MA, USA
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
High-power 2.1 /spl mu/m GaInAsSb/AlGaAsSb single-spatial mode laser diode arrays are described. Continuous wave output powers of 1.4 W have been achieved with a 64-element array.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; infrared sources; laser modes; quantum well lasers; semiconductor laser arrays; 1.4 W; 2.1 mum; 64-element array; GaInAsSb-AlGaAsSb; GaInAsSb/AlGaAsSb quantum well laser; GaSb-based laser; continuous wave operation; high-power laser; laser diode arrays; single-spatial mode laser;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361210
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