DocumentCode
1985066
Title
Continuous wave operation up to 350 K of Sb-based vertical cavity surface emitting laser near 2.3 /spl mu/m
Author
Cerutti, L. ; Garnache, A. ; Ouvrard, A. ; Genty, F.
Author_Institution
Centre d´´Electron. et de Micro-optoelectron. de Montpellier, Univ. Montepellier II, Montpellier, France
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
We report a CW 350 K operation of a diode-pumped Sb-based surface-emitting-laser at 2.3 /spl mu/m. The structure is made of a 24.5 pairs AlAsSb/GaSb Bragg mirror, 5 type-I InGaAsSb/AlGaAsSb wells. The threshold intensity is <1 kW/cm/sup 2/.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; optical pumping; quantum well lasers; surface emitting lasers; 2.3 mum; 350 K; AlAsSb-GaSb; AlAsSb/GaSb Bragg mirror; InGaAsSb-AlGaAsSb; InGaAsSb/AlGaAsSb wells; Sb-based laser; continuous wave operation; diode-pumped laser; vertical cavity surface emitting laser;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361211
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