Title :
Flash Coding Scheme Based on Error-Correcting Codes
Author :
Huang, Qin ; Lin, Shu ; Abdel-Ghaffar, Khaled
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California, Davis, CA, USA
Abstract :
Flash memory is a non-volatile computer storage device which consists of blocks of cells. While increasing the voltage level of a single cell is fast and simple, reducing the level of a cell requires the erasing of the entire block containing the cell. Since block erasures are costly, traditional flash coding schemes have been developed to maximize the number of writes before a block erasure is needed. A novel coding scheme based on error-correcting codes allows the cell levels to increase as evenly as possibly and as a result, increases the number of writes before a block erasure. The scheme is also capable of combating noise in flash memories in order to enhance data reliability.
Keywords :
error correction codes; flash memories; random-access storage; reliability; block erasure; data reliability; error-correcting codes; flash coding scheme; flash memory; nonvolatile computer storage device; Ash; Decoding; Encoding; Error correction codes; Flash memory; IEEE Communications Society; Simulation;
Conference_Titel :
Global Telecommunications Conference (GLOBECOM 2010), 2010 IEEE
Conference_Location :
Miami, FL
Print_ISBN :
978-1-4244-5636-9
Electronic_ISBN :
1930-529X
DOI :
10.1109/GLOCOM.2010.5683364