CMOS Envelope Tracking amplifier IC design for high-efficiency RF polar transmitters

Author

Wu, Po-Hsing ; Li, Yan ; Hu, Weibo ; Lopez, J. ; Lie, Donald Y C ; Liang, T.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Tech Univ., Lubbock, TX, USA

fYear

2011

fDate

15-18 May 2011

Firstpage

197

Lastpage

200

Abstract

CMOS Envelope Tracking (ET) amplifier and a RF SiGe BiCMOS power amplifier (PA) for mobile WiMAX applications is presented. Several versions of the ET amplifiers are designed and their power consumption and bandwidth considerations are discussed. Consequently, the entire polar TX system performances and design trade-offs are presented and compared against different ET amplifiers design. The IC occupies a total area of 1×1.4 mm² and is being fabricated in a TSMC 0.35μm SiGe BiCMOS process. RF/Analog/Digital system co-simulation indicates that the overall ET-based polar TX system exhibits 30% Power-Added-Efficiency (PAE) and 4.6% Error Vector Magnitude (EVM) at 19dBm PA output power and passes the stringent output spectral mask for a 10 MHz mobile WiMAX 64QAM signal with -10dB Peak-to-Average-Power Ratio (PAR).

Keywords

BiCMOS integrated circuits; WiMax; amplifiers; integrated circuit design; mobile communication; power consumption; CMOS envelope tracking amplifier IC design; ET amplifiers design; RF SiGe BiCMOS power amplifier; bandwidth considerations; design trade-off; error vector magnitude; high-efficiency RF polar transmitters; mobile WiMAX application; polar TX system performance; power consumption; power-added-efficiency; Bandwidth; CMOS integrated circuits; Mobile communication; Power amplifiers; Radio frequency; Silicon germanium; WiMAX;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2011 IEEE International Symposium on

Conference_Location

Rio de Janeiro

ISSN

0271-4302

Print_ISBN

978-1-4244-9473-6

Electronic_ISBN

0271-4302

Type

conf

DOI

10.1109/ISCAS.2011.5937535

Filename

5937535