Debye temperature of ternary chalcopyrite semiconductors

Author

Kumar, Vipin ; Shrivastava, A.K.

Author_Institution

Dept. of Electron. & Instrum., Indian Sch. of Mines Univ., Dhanbad, India

fYear

2009

fDate

22-24 Dec. 2009

Firstpage

560

Lastpage

563

Abstract

Debye temperature (??_D) of A^IB^IIIC₂ ^VI and A^IIB^IVC₂ ^V chalcopyrite semiconductors have been calculated using plasma frequency formalism. Six simple relations have been proposed to calculate the values of ??_D. Two are based on plasmon energy data and one each on molecular weight (W), melting temperature (T_m), ionicity (f_i) and energy gap (E_g). The calculated values of ??_D from all equations are compared with the experimental values and the values reported by different workers. Reasonably good agreement has been obtained between them.

Keywords

Debye temperature; energy gap; melting point; plasmons; ternary semiconductors; Debye Temperature; energy gap; ionicity; melting temperature; plasma frequency formalism; plasmon energy; ternary chalcopyrite semiconductors; Differential equations; Lattices; Light emitting diodes; Nonlinear optics; Photovoltaic cells; Plasma temperature; Plasmons; Solids; Stimulated emission; Temperature measurement; Debye temperature; Ternary Chalcopyrite Semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on

Conference_Location

Varanasi

Print_ISBN

978-1-4244-4846-3

Type

conf

DOI

10.1109/ELECTRO.2009.5441041

Filename

5441041