Title :
900 mW continuous wave operation of AlInGaP tapered lasers and superluminescent diodes at 640 nm
Author :
Linder, N. ; Butendeich, R. ; Karnutsch, C. ; Schmid, W. ; Tautz, S. ; Streubel, K. ; Rurländer, S. ; Schweizer, H. ; Scholz, F.
Author_Institution :
OSRAM Opto Semicond., Regensburg, Germany
Abstract :
900 mW of continuous-wave power has been achieved in AlInGaP tapered lasers at 640 nm. Good beam quality and high device efficiency are obtained. Superluminescent diodes show strongly increased spectral width while retaining the good beam properties.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser beams; semiconductor lasers; spectral line breadth; superluminescent diodes; 640 nm; 900 mW; AlInGaP; beam quality; continuous wave operation; high device efficiency; increased spectral width; superluminescent diodes; tapered lasers;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
