DocumentCode :
1986007
Title :
Growth Behavior of (C2H5)2GaCl and AsH3 BasedGaAs: Low Reactor Pressures and Temperatures
Author :
Kuech, T.F. ; Potemski, R. ; Cardone, F.
Author_Institution :
University of Wisconsin, Department of Chemical Engineering
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
263
Lastpage :
264
Keywords :
Ash; Chemistry; Electric variables measurement; Epitaxial growth; Gallium arsenide; Impurities; Inductors; Silicon; Temperature distribution; Thermodynamics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.665049
Filename :
665049
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1986007
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