• DocumentCode
    1986007
  • Title

    Growth Behavior of (C2H5)2GaCl and AsH3 BasedGaAs: Low Reactor Pressures and Temperatures

  • Author

    Kuech, T.F. ; Potemski, R. ; Cardone, F.

  • Author_Institution
    University of Wisconsin, Department of Chemical Engineering
  • fYear
    1992
  • fDate
    8-11 Jun 1992
  • Firstpage
    263
  • Lastpage
    264
  • Keywords
    Ash; Chemistry; Electric variables measurement; Epitaxial growth; Gallium arsenide; Impurities; Inductors; Silicon; Temperature distribution; Thermodynamics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
  • Print_ISBN
    0-87942-652-7
  • Type

    conf

  • DOI
    10.1109/MOVPE.1992.665049
  • Filename
    665049
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1986007