Title :
Technological Trends in GaAs MESFET´s for Mm-Wave Applications
Author_Institution :
Hewlett-Packard Company, Santa Rosa, California 95404, U.S.A.
Abstract :
The most recent developments in GaAs MESFET´s are reviewed and compared to the progress of other fast three-terminal devices potentially of interest for mm-wave applications. An attempt is made at predicting future performance by extrapolating the present trends.
Keywords :
Electron tubes; FETs; Frequency; Gallium arsenide; HEMTs; III-V semiconductor materials; MESFETs; MODFETs; Schottky diodes; Temperature;
Conference_Titel :
Microwave Conference, 1983. 13th European
Conference_Location :
Nurnberg, Germany
DOI :
10.1109/EUMA.1983.333212
