DocumentCode
1986078
Title
Technological Trends in GaAs MESFET´s for Mm-Wave Applications
Author
Bujatti, M.
Author_Institution
Hewlett-Packard Company, Santa Rosa, California 95404, U.S.A.
fYear
1983
fDate
3-8 Sept. 1983
Firstpage
79
Lastpage
87
Abstract
The most recent developments in GaAs MESFET´s are reviewed and compared to the progress of other fast three-terminal devices potentially of interest for mm-wave applications. An attempt is made at predicting future performance by extrapolating the present trends.
Keywords
Electron tubes; FETs; Frequency; Gallium arsenide; HEMTs; III-V semiconductor materials; MESFETs; MODFETs; Schottky diodes; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1983. 13th European
Conference_Location
Nurnberg, Germany
Type
conf
DOI
10.1109/EUMA.1983.333212
Filename
4131874
Link To Document