DocumentCode :
1986120
Title :
Reduction in carrier concentration by calcium doping in ZnO thin films
Author :
Misra, Kamakhya Prakash ; Dubey, K.C. ; Shukla, Ram Krishan ; Srivastava, Anchal
Author_Institution :
Dept. of Phys., Univ. of Lucknow, Lucknow, India
fYear :
2009
fDate :
22-24 Dec. 2009
Firstpage :
495
Lastpage :
496
Abstract :
Zinc oxide (ZnO) thin films are playing several important roles in the recent development of science and technology. In the present paper ZnO thin films, undoped as well as calcium (Ca) doped, are deposited by sol-gel spin coating method. The films are polycrystalline and highly transparent. The dielectric constants, real and imaginary part both, of the films are investigated. The imaginary part is found to decrease with increase in Ca fraction indicating the decrement of free carriers in ZnO films.
Keywords :
II-VI semiconductors; calcium; carrier density; doping profiles; permittivity; semiconductor thin films; sol-gel processing; spin coating; transparency; wide band gap semiconductors; zinc compounds; Ca fraction; ZnO; ZnO:Ca; calcium doping; carrier concentration reduction; dielectric constants; imaginary part; polycrystalline films; sol-gel spin coating deposition method; transparent films; zinc oxide thin films; Calcium; Chemicals; Coatings; Dielectric constant; Dielectric thin films; Doping; Optical films; Sputtering; Transistors; Zinc oxide; Ca doping; ZnO; dielectric constant;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
Conference_Location :
Varanasi
Print_ISBN :
978-1-4244-4846-3
Type :
conf
DOI :
10.1109/ELECTRO.2009.5441059
Filename :
5441059
Link To Document :
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