Numerical study on field effect MOS transistor detection response to modulated terahertz radiation signal

Author

Wang, Yinglei ; Yan, Zhifeng ; Zhu, Jingxuan ; Lin, Xinnan ; He, Frank

Author_Institution

Shenzhen Grad. Sch., Key Lab. of Integrated Microsyst., Peking Univ., Shenzhen, China

fYear

2009

fDate

22-24 Dec. 2009

Firstpage

475

Lastpage

478

Abstract

The detector response characteristics of the field effect MOS transistor (MOSFET) to modulated terahertz radiation signal are studied in detail in this paper by a numerical simulation program developed from the basic hydrodynamic equations which govern the terahertz signal transport in the MOSFET and a universal MOSFET charge density equation which makes this program suitable in a wide range of operation region of MOSFET terahertz detector. The simulation results agree well with the existing theory which is only suitable in the nonresonant region. The developed numerical simulation program is also used to analyze the photoresponse characteristics of the MOSFET detector to modulated terahertz radiation in the resonant region, demonstrating potential application in the detector design and optimization from a MOSFET.

Keywords

MOSFET; submillimetre wave detectors; MOSFET terahertz detector; charge density equation; detector response characteristic; field effect MOS transistor; hydrodynamic equation; modulated terahertz radiation signal; photoresponse characteristic; Electromagnetic radiation; Equations; FETs; Frequency; MOSFET circuits; Numerical simulation; Optical modulation; Radiation detectors; Resonance; Voltage; MOSFET; electronic photo devices; modulated terahertz radiation; numerical simulation; terahertz detector;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on

Conference_Location

Varanasi

Print_ISBN

978-1-4244-4846-3

Type

conf

DOI

10.1109/ELECTRO.2009.5441062

Filename

5441062