• DocumentCode
    1986285
  • Title

    Prediction of band offsets of the ternary alloy Si1-x-ySnxCy on Si

  • Author

    Sen, Gopa ; Mukhopadhyay, Bratati ; Basu, P.K.

  • Author_Institution
    Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India
  • fYear
    2009
  • fDate
    22-24 Dec. 2009
  • Firstpage
    471
  • Lastpage
    474
  • Abstract
    The band offsets and band gap for strained Si1-x-ySnxCy layers grown on Si substrate are estimated. The hydrostatic strain, the uniaxial strain and the intrinsic alloy effect are considered separately. The model is verified with the available bandgap energy of binary material.
  • Keywords
    band structure; internal stresses; photonic band gap; silicon; silicon compounds; tin compounds; Si; Si1-x-ySnxCy; band offsets; band structure; bandgap energy; binary material; hydrostatic strain; intrinsic alloy effect; strained layers; ternary alloy; uniaxial strain; Bandwidth; Capacitive sensors; Conducting materials; Germanium alloys; Lattices; Photonic band gap; Physics; Silicon alloys; Tin; Uniaxial strain; hydrostatic strain; ternary alloy; uniaxial and biaxial strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
  • Conference_Location
    Varanasi
  • Print_ISBN
    978-1-4244-4846-3
  • Type

    conf

  • DOI
    10.1109/ELECTRO.2009.5441065
  • Filename
    5441065
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1986285