• DocumentCode
    1986355
  • Title

    Synthesis and characterization of well-aligned ZnO:Sb nanowires

  • Author

    Nakamura, D. ; Okazaki, K. ; Palani, I.A. ; Higashihata, M. ; Okada, T.

  • Author_Institution
    Dept. of Electr. Eng., Kyushu Univ., Fukuoka, Japan
  • fYear
    2011
  • fDate
    Aug. 28 2011-Sept. 1 2011
  • Firstpage
    1685
  • Lastpage
    1687
  • Abstract
    Vertically-aligned ZnO nanowires on a sapphire substrate have been synthesized by a nanoparticle-assisted pulsed-laser deposition using a Sb2O3 doped ZnO target. Uniform cone-shape core was formed at the bottom of each vertically-aligned ZnO nanowire. The nanowires consist of single-crystalline wurzite ZnO crystal with a growth direction along [0001]. The room-temperature photo luminescence spectrum exhibited a strong ultraviolet emission at around 380 nm.
  • Keywords
    II-VI semiconductors; antimony compounds; nanoparticles; nanowires; pulsed laser deposition; sapphire; zinc compounds; Al2O3; ZnO:Sb2O3; nanoparticle assisted pulsed laser deposition; photoluminescence spectrum; single crystalline wurzite crystal; temperature 293 K to 298 K; uniform cone shape core; vertically aligned nanowires; wavelength 380 nm; well aligned nanowires; Nanowires; Scanning electron microscopy; Substrates; Temperature; X-ray scattering; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011
  • Conference_Location
    Sydney, NSW
  • Print_ISBN
    978-1-4577-1939-4
  • Type

    conf

  • DOI
    10.1109/IQEC-CLEO.2011.6193764
  • Filename
    6193764
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1986355