• DocumentCode
    1986410
  • Title

    Plasma chemical etching of silicon (optimization of process)

  • Author

    Bogomolov, B.K.

  • Author_Institution
    NSTU, Novosibirsk, Russia
  • fYear
    2005
  • fDate
    26 June-2 July 2005
  • Firstpage
    121
  • Lastpage
    125
  • Abstract
    The basic results of plasma etching of silicon in CCl2F2/O2 in quartz reactor with teflon polymer by a covering are considered. The inconsistent model of plasma chemical etching (PCE) of silicon in plasma CCl2F2/O2 in conditions of active delivery chemically active particles (CAP) is constructed at the expense of etching teflon polymer. The deep etching of silicon up to 180 mkm for 30 minutes is carried out. However anisotropy of deep etching of silicon is low.
  • Keywords
    micromechanical devices; polymer films; quartz; silicon; sputter etching; CCl2F2/O2; Si; chemically active particles; deep etching; process optimization; quartz reactor; silicon plasma chemical etching; teflon polymer; Anisotropic magnetoresistance; Chemical processes; Chemical technology; Etching; Microelectronics; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma temperature; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Science and Technology, 2005. KORUS 2005. Proceedings. The 9th Russian-Korean International Symposium on
  • Print_ISBN
    0-7803-8943-3
  • Type

    conf

  • DOI
    10.1109/KORUS.2005.1507660
  • Filename
    1507660
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1986410