• DocumentCode
    1986452
  • Title

    Si-based photodetectors in optical communication

  • Author

    Das, N.R.

  • Author_Institution
    Inst. of Radio Phys. & Electron., Univ. of Calcutta, Kolkata, India
  • fYear
    2009
  • fDate
    22-24 Dec. 2009
  • Firstpage
    436
  • Lastpage
    441
  • Abstract
    Si-based photodetectors play key role in the performance of Si-photonic Devices. Design of high performance Si-detectors for optical communication system is a challenging task. Drawbacks arising from low absorption efficiency due to indirect nature of the band-gap in Si, strain in Ge/Si heterointerfaces, etc are to be overcome with suitable structure/design of the detectors. In this paper, a brief review is given on Si-detectors, such as Si-CMOS, SiGe and Ge-on-Si photodetectors including their fabrication techniques, performance trend with some aspects of modeling.
  • Keywords
    Ge-Si alloys; optical communication; photodetectors; silicon; Si; SiGe; absorption efficiency; heterointerfaces; optical communication; photodetectors; Absorption; Capacitive sensors; Detectors; Fabrication; Germanium silicon alloys; Optical design; Optical fiber communication; Photodetectors; Photonic band gap; Silicon germanium; Optical detector; Si-CMOS; Si-photodetector; SiGe;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Emerging Trends in Electronic and Photonic Devices & Systems, 2009. ELECTRO '09. International Conference on
  • Conference_Location
    Varanasi
  • Print_ISBN
    978-1-4244-4846-3
  • Type

    conf

  • DOI
    10.1109/ELECTRO.2009.5441072
  • Filename
    5441072