Title :
New Progress in a Development of a 94 GHz Pretuned Module Silicon Ikpati Diode
Author :
Heitzmann, M. ; Boudot, M.
Author_Institution :
THOMSON-CSF, DCM, MONTREUIL-SOUS-BOIS, FRANCE
Abstract :
Use of low pressure epitaxy and mainly a batch process for integrated heat sink technology, associated with a very low inductive quartz encapsulation giving a radial impedance match, are described. Results for two types of these pretuned modules, one on copper the other on Diamond IIa, are given for CW oscillations reaching 800 mW with 10 % efficiency and junction temperature rise of 200°C.
Keywords :
Copper; Diodes; Etching; Gold; Heat sinks; Impedance; Metallization; Millimeter wave technology; Packaging; Silicon;
Conference_Titel :
Microwave Conference, 1983. 13th European
Conference_Location :
Nurnberg, Germany
DOI :
10.1109/EUMA.1983.333235
