Title :
Optimization of p-MOSFETs Featuring Uniaxial Stress Induced by Si1- χGeχSource/Drain and SDE
Author :
Jiahui Yuan ; Guangping Zhu ; Jinpeng Wang ; Jianping Zou ; Lilin Tian
Author_Institution :
Institute of Microelectronics, Tsinghua Univ., Beijing
Abstract :
An effective method, analyzing the impact of Si1-χGeχ(SiGe) source/drain (S/D) on the uniaxial stress distribution in p-MOSFETs, is presented. Based on this method, principles for device optimization are established, with which device performance is optimized. A new structure featuring SiGe SDE (Source-Drain Extension) is proposed and its advantage over conventional process is verified. 2-D TAURUS simulations are used in a number of carefully designed S/D structures to optimize the p-MOSFETs characteristics with 45nm gate length and 1.2nm oxide thickness. The result shows an extremely low Ioff(17.5nA/μm) and a high Ion(̃500μA/μm) at a VTof 0.32V when VSD=0.5V.
Keywords :
Compressive stress; Design optimization; Doping; Germanium silicon alloys; MOSFET circuits; Optimization methods; Silicon germanium; Space technology; Stress control; Tensile stress;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Conference_Location :
Howloon, Hong Kong
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635220
