• DocumentCode
    1986579
  • Title

    Optimization of p-MOSFETs Featuring Uniaxial Stress Induced by Si1- χGeχSource/Drain and SDE

  • Author

    Jiahui Yuan ; Guangping Zhu ; Jinpeng Wang ; Jianping Zou ; Lilin Tian

  • Author_Institution
    Institute of Microelectronics, Tsinghua Univ., Beijing
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    119
  • Lastpage
    122
  • Abstract
    An effective method, analyzing the impact of Si1-χGeχ(SiGe) source/drain (S/D) on the uniaxial stress distribution in p-MOSFETs, is presented. Based on this method, principles for device optimization are established, with which device performance is optimized. A new structure featuring SiGe SDE (Source-Drain Extension) is proposed and its advantage over conventional process is verified. 2-D TAURUS simulations are used in a number of carefully designed S/D structures to optimize the p-MOSFETs characteristics with 45nm gate length and 1.2nm oxide thickness. The result shows an extremely low Ioff(17.5nA/μm) and a high Ion(̃500μA/μm) at a VTof 0.32V when VSD=0.5V.
  • Keywords
    Compressive stress; Design optimization; Doping; Germanium silicon alloys; MOSFET circuits; Optimization methods; Silicon germanium; Space technology; Stress control; Tensile stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Conference_Location
    Howloon, Hong Kong
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635220
  • Filename
    1635220
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1986579