Effect of Surface Admittance on Non-Reciprocity in Thick Film InSb Loaded Slot Line

Thick film InSb loaded slot lines on dielectric substrate have been used to generate non-reciprocity in anisotropic media for millimeter waves propagating perpendicular to the direction of a D. C. magnetic field in order to increase the non-reciprocity effect, the concept of surface admittance may be used to obtain greater energy concentration and stronger wave fields adjacent to the dielectric substrate. This paper contains the results of theorical calculus and experiment performed to verify the effect of surface admittance in the form of distributed microcapacitance on dielectric substrate within the slot. It is shown that the interaction between the D. C. magnetic field and the strong E field currents inside InSb, results in a much larger ratios of attenuation constants than those obtained in the absence of distributed capacitance. Also a performant simplification of the spectral analysis method is verified. In this case isolation factors of the order of 22 db for, insertion loss, less than 1 db, agress with theoritical expections to a great extent.