• DocumentCode
    1986649
  • Title

    Low Noise Design of Dielectric Resonator FET Oscillators

  • Author

    Camiade, M. ; Bert, A. ; Graffeuil, J. ; Pataut, G.

  • Author_Institution
    THOMSON-CSF/DCM - Laboratoire Microélectronique Hyperfréquence 29, Avenue Carnot - 91300 MASSY FRANCE
  • fYear
    1983
  • fDate
    3-8 Sept. 1983
  • Firstpage
    297
  • Lastpage
    302
  • Abstract
    Experimental comparison has been made between different ORO circuits with FET´s of various origins and size around 11 GHz. Details of the most pertinent conclusions are given together with theoretical explanations of the observed results. A ¿105 dBc/Hz figure has been achieved at 10 KHz off carrier.
  • Keywords
    1f noise; Circuit noise; Dielectrics; FETs; Frequency; Gunn devices; Low-frequency noise; Oscillators; Semiconductor device noise; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1983. 13th European
  • Conference_Location
    Nurnberg, Germany
  • Type

    conf

  • DOI
    10.1109/EUMA.1983.333243
  • Filename
    4131905
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1986649