Title :
Device simulation for RF applications
Author :
Dutton, R.W. ; Troyanovsky, B. ; Yu, Z. ; Arnborg, T. ; Rotella, F. ; Ma, G. ; Sato-Iwanaga, J.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
The rapid growth of wireless systems at radio frequencies (RF) is driving the need for improved analog circuit and device analysis at gigaHertz frequencies. This includes: low noise front ends, linear amplifiers, mixers, and power amplifiers. Moreover, the parasitic effects of capacitance and inductance, both on- and off-chip, require careful extraction and characterization in support of predictive modeling. While time-domain techniques work well for digital systems, often the spectral and dynamic range requirements for communications systems necessitate accurate analysis of harmonic content with frequency differences of a thousandfold or more. This paper demonstrates the applicability and unique strengths of device-level harmonic balance (HB) in the simulation and physical modeling of RF circuits.
Keywords :
analogue integrated circuits; circuit analysis computing; harmonic analysis; integrated circuit modelling; mixers (circuits); power amplifiers; time-domain analysis; RF applications; analog circuit analysis; capacitance; device-level harmonic balance; dynamic range requirements; harmonic content; inductance; linear amplifiers; low noise front ends; mixers; parasitic effects; physical modeling; power amplifiers; predictive modeling; simulation; spectral range requirements; time-domain techniques; wireless systems; Analog circuits; Circuit analysis; Circuit noise; Circuit simulation; Inductance; Low-noise amplifiers; Parasitic capacitance; Predictive models; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-4100-7
DOI :
10.1109/IEDM.1997.650386