Title :
Lanthanum Oxide for Gate Dielectric Insulator
Author :
Kakushima, K. ; Tsutsui, K. ; Hattori, T. ; Iwai, H.
Author_Institution :
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan, E-mail: kaku@ep.titech.ac.jp
Abstract :
A feasibility study of La2O3, one of the rare earth oxides, for replacing SiO2gate oxide for CMOS integrated circuits has been reported. It is found that La2O3after a proper heat treatment has fairly good electrical properties for gate insulator applications in MOSFETs, namely high barrier height for the conduction band electrons and valence band holes as well as its high dielectric constant. The conduction mechanism of La2O3gate insulator has been modeled, and has been shown to be mainly by space charge limited current (SCLC). Long channel MOSFETs with La203gate insulator has been fabricated, where the best effective mobility is 319 cm2/Vs with 2.3 nm of EOT. Interfacial layer (IL) growth suppression due to heat treatment is also reported.
Keywords :
Atomic layer deposition; Dielectric constant; Dielectrics and electrical insulation; Heat treatment; High K dielectric materials; High-K gate dielectrics; Lanthanum; Leakage current; MOSFETs; Silicon;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635231
