• DocumentCode
    1986807
  • Title

    Lanthanum Oxide for Gate Dielectric Insulator

  • Author

    Kakushima, K. ; Tsutsui, K. ; Hattori, T. ; Iwai, H.

  • Author_Institution
    Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Yokohama, Japan, E-mail: kaku@ep.titech.ac.jp
  • fYear
    2005
  • fDate
    19-21 Dec. 2005
  • Firstpage
    161
  • Lastpage
    166
  • Abstract
    A feasibility study of La2O3, one of the rare earth oxides, for replacing SiO2gate oxide for CMOS integrated circuits has been reported. It is found that La2O3after a proper heat treatment has fairly good electrical properties for gate insulator applications in MOSFETs, namely high barrier height for the conduction band electrons and valence band holes as well as its high dielectric constant. The conduction mechanism of La2O3gate insulator has been modeled, and has been shown to be mainly by space charge limited current (SCLC). Long channel MOSFETs with La203gate insulator has been fabricated, where the best effective mobility is 319 cm2/Vs with 2.3 nm of EOT. Interfacial layer (IL) growth suppression due to heat treatment is also reported.
  • Keywords
    Atomic layer deposition; Dielectric constant; Dielectrics and electrical insulation; Heat treatment; High K dielectric materials; High-K gate dielectrics; Lanthanum; Leakage current; MOSFETs; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
  • Print_ISBN
    0-7803-9339-2
  • Type

    conf

  • DOI
    10.1109/EDSSC.2005.1635231
  • Filename
    1635231
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1986807