DocumentCode
1986935
Title
Low noise FET design for wireless communications
Author
Franca-Neto, L.M. ; Mao, E. ; Harris, J.S., Jr.
Author_Institution
Center for Integrated Syst., Stanford Univ., CA, USA
fYear
1997
fDate
10-10 Dec. 1997
Firstpage
305
Lastpage
308
Abstract
This work explains a new and unified microscopic treatment for noise in semiconductor devices which is well suited for the design of low noise FETs for wireless communications applications. A computational procedure for the calculation of device noise performance is described and simulated results are compared with published results for Submicron CMOS transistors.
Keywords
Boltzmann equation; field effect transistors; semiconductor device models; semiconductor device noise; device noise performance; low noise FET design; microscopic treatment; semiconductor device noise; simulated results; wireless communications; Acoustic noise; Circuit noise; FET circuits; Gallium arsenide; Microscopy; Noise figure; Semiconductor device noise; Semiconductor devices; Silicon; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1997. IEDM '97. Technical Digest., International
Conference_Location
Washington, DC, USA
ISSN
0163-1918
Print_ISBN
0-7803-4100-7
Type
conf
DOI
10.1109/IEDM.1997.650387
Filename
650387
Link To Document