DocumentCode :
1986980
Title :
Iron Redistribution Studies in Adjacent Acceptor-Doped lnP Layers: Application to as New Si-BH Laser Structure
Author :
Robein, D. ; Kazmierski, C. ; Mathoorasing, D. ; Rose, B.
Author_Institution :
Centre National d´´Etudes des Telecommunications, France
fYear :
1992
fDate :
8-11 Jun 1992
Firstpage :
273
Lastpage :
274
Keywords :
Bandwidth; Electric resistance; Epitaxial growth; Epitaxial layers; Etching; Indium phosphide; Iron; Optical device fabrication; Shape; Thermal resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Metalorganic Vapor Phase Epitaxy, 1992. Sixth International Conference
Print_ISBN :
0-87942-652-7
Type :
conf
DOI :
10.1109/MOVPE.1992.665054
Filename :
665054
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1986980
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