Intense terahertz emission from GaAs and InAs thin films grown on GaSb substrates

Author

Que, Christopher T. ; Estacio, Elmer ; Sadia, Cyril ; Somintac, Armando ; Yamamoto, Kohji ; Salvador, Arnel ; Tani, Masahiko

Author_Institution

Res. Center for Dev. of Far-Infrared Region, Univ. of Fukui, Fukui, Japan

fYear

2011

fDate

Aug. 28 2011-Sept. 1 2011

Firstpage

458

Lastpage

460

Abstract

We report on the terahertz (THz) emission from n-GaAs/p-GaSb and /p-InAs/n-GaSb structures using a 1.55 μm femtosecond laser excitation. The effect of the n-GaAs thin film on a p-GaSb substrate is investigated. Significant THz emission from n-GaAs/p-GaSb compared to bare p-GaSb is observed and could be attributed to the built-in field at the interface of the sample. The comparison with a bulk p-InAs and p-InAs/n-GaSb indicates n-GaAs/p-GaSb is a strong THz emitter comparable with those InAs-based emitters.

Keywords

III-V semiconductors; gallium compounds; indium compounds; laser beam effects; semiconductor growth; terahertz wave generation; GaSb; InAs; built-in field; femtosecond laser excitation; intense terahertz emission; thin films grown; wavelength 1.55 mum; Gallium arsenide; Laser excitation; Optical surface waves; Substrates; Surface emitting lasers; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics Conference & Lasers and Electro-Optics (CLEO/IQEC/PACIFIC RIM), 2011

Conference_Location

Sydney, NSW

Print_ISBN

978-1-4577-1939-4

Type

conf

DOI

10.1109/IQEC-CLEO.2011.6193806

Filename

6193806