Title :
High-Q SiO2 whispering gallery mode resonator
Author :
Giordano, V. ; Barhaila, R. ; Cros, D. ; Duchiron, G.
Author_Institution :
Lab. de Phys. et Metrol. des Oscillateurs, Besancon, France
Abstract :
We have implemented two whispering gallery mode resonators in order to test the potential of such a structure using SiO2 monocrystals as a dielectric resonator. Permittivity measurements and a 3D finite elements model enable us to calculate the resonance frequencies of the WGH and WGE modes with a good accuracy. The SiO2 whispering gallery mode resonator presents at 16 GHz a Q-factor of the order of 50,000 at the ambient temperature with a temperature frequency stability of 26 ppm/K. These results are comparable to those obtained with a sapphire dielectric resonator. Attempts have been made in order to reach higher performances by cooling the resonator down to 77 K, but the obtained results show only a small increase in Q-factor. We can conclude that the main advantages of the SiO2 resonator are its low cost and its availability. It could be used as frequency reference operating at the ambient temperature when no extreme performances are required
Keywords :
Q-factor; cooling; dielectric resonators; finite element analysis; frequency stability; microwave devices; permittivity; silicon compounds; 16 GHz; 300 K; 3D finite elements model; 77 K; SiO2; SiO2 monocrystals; SiO2 resonator; WGE mode; WGH mode; cooling; dielectric resonator; frequency reference; frequency stability; high-Q resonator; low cost resonator; permittivity measurements; resonance frequencies; whispering gallery mode resonator; Dielectrics; Finite element methods; Permittivity measurement; Q factor; Resonance; Resonant frequency; Stability; Temperature; Testing; Whispering gallery modes;
Conference_Titel :
Frequency and Time Forum, 1999 and the IEEE International Frequency Control Symposium, 1999., Proceedings of the 1999 Joint Meeting of the European
Conference_Location :
Besancon
Print_ISBN :
0-7803-5400-1
DOI :
10.1109/FREQ.1999.841375
