DocumentCode
1987254
Title
Device Simulation in Nanoelectronic Era
Author
Yu, Zhiping
Author_Institution
Dept. Microelectronics and Nanoelectronics, Tsinghua University, Beijing 100084, China. yuzhip@tsinghua.edu.cn
fYear
2005
fDate
19-21 Dec. 2005
Firstpage
243
Lastpage
246
Abstract
Progress in combining bandstructure calculation and solid-state device simulation is reviewed. Even though the underlying physics in nano-scaled devices has been shifted from classical to quantum mechanisms. the purpose of electronic devices remains the same: to provide switch and amplification for electrical signals. Key features in the next generation of device simulators serving both microelectronics and nanoelectronics are projected.
Keywords
bandstructure; device simulation; nlanoelectroinc devices; quantum transport; Electrons; Equations; Microelectronics; Nanoscale devices; Nanowires; Photonic band gap; Physics; Silicon; Solid state circuits; Switches; bandstructure; device simulation; nlanoelectroinc devices; quantum transport;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN
0-7803-9339-2
Type
conf
DOI
10.1109/EDSSC.2005.1635252
Filename
1635252
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