DocumentCode
1987350
Title
Design of Fixed Temperature Coefficient Bandgap Reference
Author
Zhao, Tao ; Zhang, Dacheng
Author_Institution
Institute of Microelectronics, Peking University, Beijing, China. E-mail: zhaotao@ime.pku.edu.cn
fYear
2005
fDate
19-21 Dec. 2005
Firstpage
263
Lastpage
266
Abstract
Since the sensitivity of a piezoresistive device has a large negative temperature coefficient, the device output decreases with the increase of the temperature. It is necessary to design a voltage reference which has the same temperature coefficient with the sensitivity of piezoresistive device to inhabit the temperature drift. The temperature coefficient of the designed voltage reference is calculated to be -2200ppm/°C and the output voltage is 1.5874v in room temperature, which can satisfy with the compensation requirements of the piezeresistive device.
Keywords
Bipolar transistors; Bridge circuits; Photonic band gap; Piezoresistance; Piezoresistive devices; Power supplies; Resistors; Temperature distribution; Temperature sensors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN
0-7803-9339-2
Type
conf
DOI
10.1109/EDSSC.2005.1635257
Filename
1635257
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