Title :
Design of Fixed Temperature Coefficient Bandgap Reference
Author :
Zhao, Tao ; Zhang, Dacheng
Author_Institution :
Institute of Microelectronics, Peking University, Beijing, China. E-mail: zhaotao@ime.pku.edu.cn
Abstract :
Since the sensitivity of a piezoresistive device has a large negative temperature coefficient, the device output decreases with the increase of the temperature. It is necessary to design a voltage reference which has the same temperature coefficient with the sensitivity of piezoresistive device to inhabit the temperature drift. The temperature coefficient of the designed voltage reference is calculated to be -2200ppm/°C and the output voltage is 1.5874v in room temperature, which can satisfy with the compensation requirements of the piezeresistive device.
Keywords :
Bipolar transistors; Bridge circuits; Photonic band gap; Piezoresistance; Piezoresistive devices; Power supplies; Resistors; Temperature distribution; Temperature sensors; Voltage;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635257
