Title :
3D TCAD statistical analysis of transient charging in BTI degradation of nanoscale MOSFETs
Author :
Amoroso, Salvatore Maria ; Gerrer, Louis ; Asenov, Asen
Author_Institution :
Device Modelling Group, Univ. of Glasgow, Glasgow, UK
Abstract :
We present a comprehensive 3D statistical simulation analysis of transient charging during BTI degradation in nanoscale MOSFETs. We study the impact of several variability sources affecting the trap capture time constants. Our simulation results identify the activation energy involved in the multi-phonon capture process as major parameter responsible for BTI time constants variability. Our findings highlight the importance of further multiscale investigation involving experimental characterization, mesoscopic TCAD modeling and microscopic ab-initio computations.
Keywords :
MOSFET; ab initio calculations; nanoelectronics; phonon-phonon interactions; statistical analysis; technology CAD (electronics); 3D TCAD statistical analysis; BTI degradation; activation energy; mesoscopic TCAD modeling; microscopic ab-initio computations; multiphonon capture process; nanoscale MOSFET; transient charging; trap capture time constants; variability sources; Charge carrier processes; Computational modeling; Logic gates; MOSFET; Nanoscale devices; Three-dimensional displays; Transient analysis; Device Modeling; NBTI; Nanoscale MOSFETs; RTN; Reliability; Variability;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location :
Glasgow
Print_ISBN :
978-1-4673-5733-3
DOI :
10.1109/SISPAD.2013.6650560
