3D TCAD statistical analysis of transient charging in BTI degradation of nanoscale MOSFETs

Author

Amoroso, Salvatore Maria ; Gerrer, Louis ; Asenov, Asen

Author_Institution

Device Modelling Group, Univ. of Glasgow, Glasgow, UK

fYear

2013

fDate

3-5 Sept. 2013

Firstpage

5

Lastpage

8

Abstract

We present a comprehensive 3D statistical simulation analysis of transient charging during BTI degradation in nanoscale MOSFETs. We study the impact of several variability sources affecting the trap capture time constants. Our simulation results identify the activation energy involved in the multi-phonon capture process as major parameter responsible for BTI time constants variability. Our findings highlight the importance of further multiscale investigation involving experimental characterization, mesoscopic TCAD modeling and microscopic ab-initio computations.

Keywords

MOSFET; ab initio calculations; nanoelectronics; phonon-phonon interactions; statistical analysis; technology CAD (electronics); 3D TCAD statistical analysis; BTI degradation; activation energy; mesoscopic TCAD modeling; microscopic ab-initio computations; multiphonon capture process; nanoscale MOSFET; transient charging; trap capture time constants; variability sources; Charge carrier processes; Computational modeling; Logic gates; MOSFET; Nanoscale devices; Three-dimensional displays; Transient analysis; Device Modeling; NBTI; Nanoscale MOSFETs; RTN; Reliability; Variability;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on

Conference_Location

Glasgow

ISSN

1946-1569

Print_ISBN

978-1-4673-5733-3

Type

conf

DOI

10.1109/SISPAD.2013.6650560

Filename

6650560