Title :
A 1.8- V High-Precision Compensated CMOS Bandgap Reference
Author :
Weng, Ro-Min ; Hsu, Xie-Ren ; Kuo, Yue-Fang
Author_Institution :
Department of Electrical Engineering, National Dong Hwa University, Taiwan, R.O.C. E-mail: romin@mail.ndhu.edu.tw
Abstract :
A high-precision temperature-compensated ompensated CMOS bandgap reference is proposed and simulated using tsmc 0.18-μm process. The bandgap reference can be operated from a supply voltage as low as 1.8-V. The proposed circuit generates an output reference voltage of 615.1 mV with a variation of ±0.7 mV over a temperature range from 0 to 70°C. The output reference voltage exhibits ± 1mV supply variation from the mean value when the supply changes from 1.6-V to 2.4-V. The power supply rejection ratio is greater than 35 dB for frequency below 10 kHz. The presented bandgap reference occupies only 0.1 mm2 layout area after trimming.
Keywords :
Bandgap reference; temperature coefficient; CMOS process; Circuit simulation; Diodes; Low voltage; Photonic band gap; Power supplies; Resistors; Temperature distribution; Transconductance; Turning; Bandgap reference; temperature coefficient;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2005 IEEE Conference on
Print_ISBN :
0-7803-9339-2
DOI :
10.1109/EDSSC.2005.1635259
