DocumentCode
1987516
Title
Donor deactivation at high doping limit: Donor pair and impurity band model
Author
Chihak Ahn ; Woosung Choi ; Schmidt, A. ; Keunho Lee ; Youngkwan Park ; Kubotera, Hiroyuki ; Kayama, Yasuyuki ; Cowern, N.E.B.
Author_Institution
Device Lab., Samsung Semicond. Inc., San Jose, CA, USA
fYear
2013
fDate
3-5 Sept. 2013
Firstpage
37
Lastpage
40
Abstract
We present a donor deactivation model at high doping limit. The limitation of the existing activation model is discussed and a solution is proposed. In the new model, the impurity band model is combined with ab-initio based lattice Monte Carlo (LMC) simulation to explain the saturation behavior of active donor concentration experimentally observed. The developed impurity band model can reproduce the activation level correctly and improves our understanding of charge carrier distribution in the impurity band. It also provides a new aspect of the behavior of the Fermi level (EF) at high doping limit. As a result, incorporating the new models into the existing diffusion and activation model improves the predictability of donor activation level.
Keywords
Fermi level; Monte Carlo methods; ab initio calculations; band theory; diffusion; doping; impurities; Fermi level; ab-initio based lattice Monte Carlo simulation; active donor concentration; charge carrier distribution; diffusion; donor activation level; donor deactivation model; donor pair; high doping limit; impurity band model; saturation behavior; Chemicals; Doping; Energy states; Impurities; Semiconductor device modeling; Semiconductor process modeling; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
Conference_Location
Glasgow
ISSN
1946-1569
Print_ISBN
978-1-4673-5733-3
Type
conf
DOI
10.1109/SISPAD.2013.6650568
Filename
6650568
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