• DocumentCode
    1987516
  • Title

    Donor deactivation at high doping limit: Donor pair and impurity band model

  • Author

    Chihak Ahn ; Woosung Choi ; Schmidt, A. ; Keunho Lee ; Youngkwan Park ; Kubotera, Hiroyuki ; Kayama, Yasuyuki ; Cowern, N.E.B.

  • Author_Institution
    Device Lab., Samsung Semicond. Inc., San Jose, CA, USA
  • fYear
    2013
  • fDate
    3-5 Sept. 2013
  • Firstpage
    37
  • Lastpage
    40
  • Abstract
    We present a donor deactivation model at high doping limit. The limitation of the existing activation model is discussed and a solution is proposed. In the new model, the impurity band model is combined with ab-initio based lattice Monte Carlo (LMC) simulation to explain the saturation behavior of active donor concentration experimentally observed. The developed impurity band model can reproduce the activation level correctly and improves our understanding of charge carrier distribution in the impurity band. It also provides a new aspect of the behavior of the Fermi level (EF) at high doping limit. As a result, incorporating the new models into the existing diffusion and activation model improves the predictability of donor activation level.
  • Keywords
    Fermi level; Monte Carlo methods; ab initio calculations; band theory; diffusion; doping; impurities; Fermi level; ab-initio based lattice Monte Carlo simulation; active donor concentration; charge carrier distribution; diffusion; donor activation level; donor deactivation model; donor pair; high doping limit; impurity band model; saturation behavior; Chemicals; Doping; Energy states; Impurities; Semiconductor device modeling; Semiconductor process modeling; Shape;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices (SISPAD), 2013 International Conference on
  • Conference_Location
    Glasgow
  • ISSN
    1946-1569
  • Print_ISBN
    978-1-4673-5733-3
  • Type

    conf

  • DOI
    10.1109/SISPAD.2013.6650568
  • Filename
    6650568